Title :
Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics
Author :
Tsui, Bing-Yue ; Li, Po-Hsueh ; Yen, Chih-Chan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Extreme ultraviolet (EUV) irradiation may induce damages on high-dielectric-constant (high- k) dielectrics. In this letter, the EUV-irradiation-induced damages on HfSiO, HfAlO, and Al2O3 are investigated. After EUV irradiation, hole traps, border traps, and interface traps are all increased. All of the three high-k dielectrics exhibit poorer immunity to the EUV irradiation than SiO2. The oxide traps scale down with the dielectric thickness. Interfacial layer plays an important role in the increase of border traps and interface traps. Therefore, high-quality SiO-like interfacial layer is critical for radiation-hard devices.
Keywords :
MIS capacitors; aluminium compounds; hafnium compounds; hole traps; interface states; permittivity; radiation hardening (electronics); silicon compounds; ultraviolet lithography; Al2O3; EUV irradiation; HfAlO; HfSiO; SiO; border trap; dielectric thickness; extreme ultraviolet irradiation; high-dielectric-constant dielectric; high-k dielectric; high-k-metal gate MIS capacitor; high-quality interfacial layer; hole trap; interface trap; oxide trap; radiation-hard device; Aluminum oxide; Dielectrics; High K dielectric materials; Logic gates; MOCVD; Radiation effects; Ultraviolet sources; Border traps; extreme ultraviolet (EUV); high-dielectric-constant dielectrics; hole traps; interface states;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2165521
