DocumentCode
1328646
Title
Physically-based RF model for metal-oxide-metal capacitors
Author
Geng, Chunqi ; Chew, Kok Wai ; Yeo, Kiat Seng ; Do, Manh Anh ; Ma, Jianguo ; Chua, Chee Tee ; Shao, Kai
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Volume
36
Issue
5
fYear
2000
fDate
3/2/2000 12:00:00 AM
Firstpage
425
Lastpage
427
Abstract
A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model
Keywords
MIM devices; MMIC; UHF integrated circuits; capacitors; integrated circuit modelling; mixed analogue-digital integrated circuits; 1 to 10 GHz; MOM; RF applications; metal-oxide-metal capacitors; mixed-signal ICs; parasitics; physical properties; physical topology; physically-based RF model;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000393
Filename
840078
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