Title :
Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800°C
Author :
Hughes, P.J. ; Knights, A.P. ; Weiss, B.L. ; Ojha, S.
Author_Institution :
Sch. of Electron. Eng., Surrey Univ., Guildford, UK
fDate :
3/2/2000 12:00:00 AM
Abstract :
An experimental study of the absorption, refractive index and UV photosensitivity of proton implanted Ge-doped planar glass waveguides has shown that the defects induced by implantation at 800°C were photobleached after UV exposure and that self annealing occurred
Keywords :
annealing; germanium; ion implantation; noncrystalline defects; optical glass; optical planar waveguides; optical saturable absorption; refractive index; silicon compounds; ultraviolet spectra; 800 C; SiO2:Ge; SiO2:Ge,H; SiO2:Ge,H+; UV exposure; UV photosensitivity; absorption; defects; implantation; optical characteristics; photobleaching; photosensitive Ge-doped SiO2 planar waveguides; proton implanted Ge-doped planar glass waveguides; refractive index; self annealing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000367
