DocumentCode
1328706
Title
Smaller, faster, tougher
Author
Ozpineci, Burak ; Tolbert, Leon
Volume
48
Issue
10
fYear
2011
fDate
10/1/2011 12:00:00 AM
Firstpage
45
Lastpage
66
Abstract
Silicon has long been the semiconductor of choice for such power electronics. But soon this ubiquitous substance will have to share the spotlight. Devices made from silicon carbide (SiC)-a faster, tougher, and more efficient alternative to straight silicon-are beginning to take off. Simple SiC diodes have already started to supplant silicon devices in some applica tions. And over the last few years, they´ve been joined by the first commercially available SiC transistors, enabling anew range of SiC-based power electronics. What´s more, SiC wafer manufacturers have steadily reduced the defects in the material while increasing the wafer size, thus driving down the prices of SiC devices. Last year, according to estimates made by wafer maker Cree, the global market for silicon car bide devices topped US $100 million for the first time.
Keywords
power electronics; semiconductor diodes; silicon compounds; transistors; wide band gap semiconductors; Cree; SiC; diodes; power electronics; transistors; wafer manufacturers; Electricity; Schottky diodes; Silicon carbide; Technological innovation; Transistors;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.2011.6027247
Filename
6027247
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