• DocumentCode
    1328706
  • Title

    Smaller, faster, tougher

  • Author

    Ozpineci, Burak ; Tolbert, Leon

  • Volume
    48
  • Issue
    10
  • fYear
    2011
  • fDate
    10/1/2011 12:00:00 AM
  • Firstpage
    45
  • Lastpage
    66
  • Abstract
    Silicon has long been the semiconductor of choice for such power electronics. But soon this ubiquitous substance will have to share the spotlight. Devices made from silicon carbide (SiC)-a faster, tougher, and more efficient alternative to straight silicon-are beginning to take off. Simple SiC diodes have already started to supplant silicon devices in some applica tions. And over the last few years, they´ve been joined by the first commercially available SiC transistors, enabling anew range of SiC-based power electronics. What´s more, SiC wafer manufacturers have steadily reduced the defects in the material while increasing the wafer size, thus driving down the prices of SiC devices. Last year, according to estimates made by wafer maker Cree, the global market for silicon car bide devices topped US $100 million for the first time.
  • Keywords
    power electronics; semiconductor diodes; silicon compounds; transistors; wide band gap semiconductors; Cree; SiC; diodes; power electronics; transistors; wafer manufacturers; Electricity; Schottky diodes; Silicon carbide; Technological innovation; Transistors;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.2011.6027247
  • Filename
    6027247