An 18-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70–80 GHz Band

Author

Sarkas, Ioannis ; Nicolson, Sean T. ; Tomkins, Alexander ; Laskin, Ekaterina ; Chevalier, Pascal ; Sautreuil, Bernard ; Voinigescu, Sorin P.

Author_Institution

Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada

Volume

45

Issue

10

fYear

2010

Firstpage

1968

Lastpage

1980

Abstract

This paper describes a single-chip, 70-80 GHz wireless transceiver utilizing a direct mm-wave QPSK modulator. The transceiver was fabricated in a 130 nm SiGe BiCMOS technology and can operate at data rates in excess of 18 Gb/s. The peak gain of the zero-IF receiver is 50 dB, the double sideband noise figure remains below 7 dB, while the 3-dB receive-chain bandwidth extends from DC to over 6 GHz. The differential transmitter achieves a maximum output power of +9 dBm. The total power consumption of the 1.9 mm × 1.1 mm transceiver is 1.2 W from 1.5, 2.5 and 3.3 V power supplies, including the 4 × 20-Gb/s PRBS generator.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; quadrature phase shift keying; transceivers; SiGe; bit rate 18 Gbit/s; direct QPSK modulation BiCMOS transceiver; direct mm-wave QPSK modulator; frequency 70 GHz to 80 GHz; gain 50 dB; last mile links; power 1.2 W; size 130 nm; voltage 1.5 V; voltage 2.5 V; voltage 3.3 V; Gain; Phase shift keying; Power generation; Receivers; Transceivers; Transistors; 90-degree hybrid; IQ receiver; QPSK modulator; SiGe BiCMOS; W-band; direct modulation; mm-wave transceiver; wireless communications;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2010.2058011

Filename

5579983