DocumentCode :
1328757
Title :
A Passive W-Band Imaging Receiver in 65-nm Bulk CMOS
Author :
Tomkins, Alexander ; Garcia, Patrice ; Voinigescu, Sorin P.
Author_Institution :
Edward S. Rogers Sr. Dept. of ECE, Toronto, ON, Canada
Volume :
45
Issue :
10
fYear :
2010
Firstpage :
1981
Lastpage :
1991
Abstract :
A passive imaging receiver operating in the W-band around 90 GHz has been realized in a digital 65-nm CMOS process. The circuit, occupying only 0.41 mm2, integrates an SPDT switch with 4.2 dB loss and 25 dB isolation, a five-stage telescopic cascode LNA with 27 dB gain at 90 GHz, and a W-band square-law detector, all consuming less than 33 mA from 1.2 V. A version of the receiver without the input SPDT switch has a peak responsivity of over 200 kV/W and a minimum NEP of less than 0.1 pW/ Hz. The full Dicke radiometer, which includes the input switch, achieves a responsivity of 90 kV/W and an NEP of 0.2 pW/ Hz. This work represents the first W-band passive imaging receiver to be implemented in standard CMOS with this level of integration.
Keywords :
CMOS image sensors; millimetre wave imaging; millimetre wave receivers; radiometers; SPDT switch; W-band square-law detector; bulk CMOS; five-stage telescopic cascode LNA; frequency 90 GHz; full Dicke radiometer; gain 27 dB; loss 4.2 dB; millimeter-wave imager; passive W-band imaging receiver; peak responsivity; size 65 nm; voltage 1.2 V; Detectors; Gain; Imaging; Noise; Radiometry; Receivers; Switches; 65-nm CMOS; Dicke radiometer; W-band; millimeter-wave imager;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2058150
Filename :
5579984
Link To Document :
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