High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

Author

Nguyen, N.X. ; Micovic, M. ; Wong, W.-S. ; Hashimoto, P. ; McCray, L.-M. ; Janke, P. ; Nguyen, C.

Author_Institution

HLR Lab., Malibu, CA, USA

Volume

36

Issue

5

fYear

2000

fDate

3/2/2000 12:00:00 AM

Firstpage

468

Lastpage

469

Abstract

High performance GaN/AlGaN MODFETs grown by MBE directly on SiC substrate have been successfully fabricated and characterised. The epitaxial layers of the device were grown by RF-assisted MBE. Excellent device uniformity, reproducibility and scalability were obtained. Maximum output density of 6.5 W/mm was obtained for a 0.1 mm device. On scaling to 1.0 mm gate-width, a total output power of 6.3 W with 38% PAE at 10 GHz was achieved. These device results demonstrate the excellent potential of GaN-based FETs as power cells for practical microwave applications

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power HEMT; semiconductor epitaxial layers; semiconductor growth; 0.1 mm; 1.0 mm; 10 GHz; 38 percent; 6.3 W; GaN-AlGaN; PAE; RF-assisted MBE; device uniformity; epitaxial layers; microwave applications; microwave power MODFETs; output density; power cells; reproducibility; scalability; total output power;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000352

Filename

840106