Title :
Robust low microwave noise GaN MODFETs with 0.60 dB noise figure at 10 GHz
Author :
Nguyen, N.X. ; Micovic, M. ; Wong, W.-S. ; Hashimoto, P. ; Janke, P. ; Harvey, D. ; Nguyen, C.
Author_Institution :
HRL Lab., Malibu, CA, USA
fDate :
3/2/2000 12:00:00 AM
Abstract :
A demonstration of the high performance microwave-noise characteristics of robust 0.15 μm gate-length GaN/AlGaN MODFETs is reported. Very low noise figures were achieved through the optimisation of materials growth and device fabrication processes. A minimum noise figure of 0.60 dB at 10 GHz has been achieved with a gate-drain breakdown voltage of 68 V. These excellent combined characteristics clearly demonstrate the potential of GaN MODFETs for robust low-noise amplifiers
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device breakdown; semiconductor device noise; semiconductor device reliability; 0.15 micron; 0.60 dB; 10 GHz; 68 V; GaN-AlGaN; III-V semiconductors; MODFETs; device fabrication processes; gate-drain breakdown voltage; low-noise amplifiers; materials growth; microwave noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000353
