DocumentCode
1328872
Title
Robust low microwave noise GaN MODFETs with 0.60 dB noise figure at 10 GHz
Author
Nguyen, N.X. ; Micovic, M. ; Wong, W.-S. ; Hashimoto, P. ; Janke, P. ; Harvey, D. ; Nguyen, C.
Author_Institution
HRL Lab., Malibu, CA, USA
Volume
36
Issue
5
fYear
2000
fDate
3/2/2000 12:00:00 AM
Firstpage
469
Lastpage
471
Abstract
A demonstration of the high performance microwave-noise characteristics of robust 0.15 μm gate-length GaN/AlGaN MODFETs is reported. Very low noise figures were achieved through the optimisation of materials growth and device fabrication processes. A minimum noise figure of 0.60 dB at 10 GHz has been achieved with a gate-drain breakdown voltage of 68 V. These excellent combined characteristics clearly demonstrate the potential of GaN MODFETs for robust low-noise amplifiers
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device breakdown; semiconductor device noise; semiconductor device reliability; 0.15 micron; 0.60 dB; 10 GHz; 68 V; GaN-AlGaN; III-V semiconductors; MODFETs; device fabrication processes; gate-drain breakdown voltage; low-noise amplifiers; materials growth; microwave noise;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000353
Filename
840107
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