Piezoresistive properties of 3C-SiC films anodically bonded to aluminosilicate glass substrates

Current leakage problems observed in conventional 3C-SiC/Si heterojunction piezoresistive structures at high temperatures have been resolved through the anodic bonding of the 3C-SiC thin films onto insulating aluminosilicate glass substrates having a thermal expansion coefficient close to that of Si. The gauge factor of such 3C-SiC/SiO/sub 2//glass structures was extremely stable up to temperatures as high as 600 K with a fluctuation of <5%.