Title :
Semi-empirical model of electron mobility in MOSFETS in strong inversion regime
Author :
Banqueri, J. ; Llanueva, J. Lopez-Vi ; Gamiz, F. ; Palma, A. ; Carceller, J.E.
Author_Institution :
Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
fDate :
8/1/1996 12:00:00 AM
Abstract :
The authors present a semi-empirical model for the electron mobility in a MOSFET in the strong inversion region. The model includes the contribution of the coulomb, phonon and surface-roughness scattering, and reproduces experimental results with high accuracy in the 77-300 K temperature range. The authors analyse the influence of coulomb scattering on the different terms of the model after stressing the samples with successive Fowler-Nordheim tunnelling-injection series. In addition, it is shown that the terms a priori attributed to coulomb and phonon scattering receive the contribution of both mechanisms and thus cannot be separately attributed to each of them
Keywords :
MOSFET; electron mobility; interface states; semiconductor device models; tunnelling; 77 to 300 K; I-V characteristics; MOSFET; coulomb scattering; electron mobility; phonon scattering; semi-empirical model; strong inversion regime; successive Fowler-Nordheim tunnelling-injection series; surface-roughness scattering;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19960337
