Title :
Millimetre-wave frequency tripling using stacked heterostructure-barrier varactors on InP
Author :
Krishnamurthi, K. ; Harrison, R.G.
Author_Institution :
nortel labs., Ottawa, Ont., Canada
fDate :
8/1/1996 12:00:00 AM
Abstract :
Heterostructure-barrier varactors (HBVs) reported previously had limited power output. By using a pseudomorphic In0.52Al0.48As-AlAs-In0.52Al0.48 As barrier with good current blocking characteristics and stacking three MBE-grown varactor layers, we achieve a symmetric stacked varactor on InP with low leakage and high breakdown voltage (~14 V). Tripler experiments at Ka band using these varactors give 20 dBm output with 7 dB conversion loss using a waveguide multiplier, and 10.8 dBm with 11 dB conversion loss using a microstrip circuit. These are the first HBVs to demonstrate reduced device capacitance per unit area and freedom from resistive tripling effects
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; indium compounds; microstrip circuits; millimetre wave frequency convertors; molecular beam epitaxial growth; varactors; waveguide components; 11 dB; 14 V; 7 dB; III V semiconductors; In0.52Al0.48As-AlAs-In0.52Al 0.48As; InP; Ka band; MBE grown varactor layers; conversion loss; current blocking characteristics; heterostructure barrier varactors; high breakdown voltage; low leakage; microstrip circuit; millimetre-wave frequency tripling; power output; reduced device capacitance; stacked heterostructure-barrier varactors; symmetric stacked varactor; tripler experiments; waveguide multiplier;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings
DOI :
10.1049/ip-map:19960431
