A New Trench Power MOSFET With an Inverted L-Shaped Source Region

Author

Ng, Jacky C W ; Sin, Johnny K O ; Sumida, Hitoshi ; Toyoda, Yoshiaki ; Ohi, Akihiko ; Tanaka, Hiroyuki ; Nishimura, Takeyoshi ; Ueno, Katsunori

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

31

Issue

11

fYear

2010

Firstpage

1284

Lastpage

1286

Abstract

A new trench power MOSFET with an inverted L-shaped source region is proposed and experimentally demonstrated. The fabricated new device has a breakdown voltage of 54 V. The avalanche energy absorption of the new device at unclamped inductive switching is 2.1 times that of the fabricated conventional trench power MOSFET. This is due to the minimized n⁺-source/p-body junction in the structure. Moreover, the specific on-resistance of the new device is reduced by 30% due to the smaller pitch. The new device is very promising for automotive electric power steering applications.

Keywords

power MOSFET; automotive electric power steering applications; avalanche energy absorption; inverted L-shaped source region; minimized n⁺-source-p-body junction; power MOSFET; specific ON-resistance; undamped inductive switching; voltage 54 V; Junctions; Logic gates; Metallization; Power MOSFET; Silicon; Switches; Avalanche current; avalanche energy; on-resistance; trench power MOSFET; unclamped inductive switching (UIS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2068032

Filename

5580031