Title :
180 mW DBR lasers with first-order grating in GaAs emitting at 1062 nm
Author :
Hofmann, Lutz ; Klehr, A. ; Bugge, F. ; Wenzel, Hans ; Smirnitski, V. ; Sebastian, J. ; Erbert, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfequenztech., Berlin, Germany
fDate :
3/16/2000 12:00:00 AM
Abstract :
Distributed Bragg reflector (DBR) lasers emitting at 1062 nm using a first-order grating fabricated by holographic lithography in a GaAs waveguide layer have been realised for the first time. At room temperature the DBR lasers show excellent characteristics with a monomode output power of 180 mW at 300 mA
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; photolithography; semiconductor lasers; 1062 nm; 180 mW; 300 mA; DBR lasers; GaAs; first-order grating; holographic lithography; monomode output power; semiconductor lasers; waveguide layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000465
