DocumentCode
1329195
Title
180 mW DBR lasers with first-order grating in GaAs emitting at 1062 nm
Author
Hofmann, Lutz ; Klehr, A. ; Bugge, F. ; Wenzel, Hans ; Smirnitski, V. ; Sebastian, J. ; Erbert, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfequenztech., Berlin, Germany
Volume
36
Issue
6
fYear
2000
fDate
3/16/2000 12:00:00 AM
Firstpage
534
Lastpage
535
Abstract
Distributed Bragg reflector (DBR) lasers emitting at 1062 nm using a first-order grating fabricated by holographic lithography in a GaAs waveguide layer have been realised for the first time. At room temperature the DBR lasers show excellent characteristics with a monomode output power of 180 mW at 300 mA
Keywords
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; photolithography; semiconductor lasers; 1062 nm; 180 mW; 300 mA; DBR lasers; GaAs; first-order grating; holographic lithography; monomode output power; semiconductor lasers; waveguide layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000465
Filename
840150
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