Title :
High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 μm
Author :
Yarekha, D.A. ; Glastre, G. ; Perona, A. ; Rouillard, Y. ; Genty, Frederic ; Skouri, E.M. ; Boissier, G. ; Grech, P. ; Joullie, A. ; Alibert, C. ; Baranov, A.N.
Author_Institution :
Centre d´´Electron. et Microoptoelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
3/16/2000 12:00:00 AM
Abstract :
Narrow ridge 5 μm-wide GaInSbAs/GaAlSbAs quantum well (QW) lasers emitting in the continuous wave (CW) regime at temperatures up to 130°C have been fabricated. The CW threshold current varied between 20 and 35 mA at room temperature (RT). The lasers operated in the fundamental spatial mode and exhibited single longitudinal mode emission over a wide range of CW operation conditions. The emission wavelength increased from 2.26 μm at RT up to 2.43 μm at 124°C. The CW output optical power reached 45 mW/facet at 22°C and exceeded 10 mW/facet at 100°C
Keywords :
aluminium compounds; antimony compounds; gallium arsenide; gallium compounds; high-temperature electronics; indium compounds; laser modes; laser transitions; quantum well lasers; 2.26 to 2.43 micron; 20 to 35 mA; 22 to 130 C; CW operation conditions; CW threshold current; GaInSbAs-GaAlSbAs; GaInSbAs/GaAlSbAs quantum well; emission wavelength variation; fundamental spatial mode; high temperature QW lasers; quantum well CW lasers; semiconductor lasers; single longitudinal mode emission; singlemode continuous wave lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000416
