• DocumentCode
    1329234
  • Title

    Reactive ion etching of InAlAs and InAlGaAs with BCl3/Cl 2/CH4/H2 mixtures for long-wavelength VCSELs

  • Author

    Shin, J.H. ; Yoo, B.S. ; Kwon, O.K.

  • Author_Institution
    Telecommun. Basic Res. Lab., Electron. & Telecommun. Res. Inst., Taejeon, South Korea
  • Volume
    36
  • Issue
    6
  • fYear
    2000
  • fDate
    3/16/2000 12:00:00 AM
  • Firstpage
    542
  • Lastpage
    543
  • Abstract
    A novel reactive ion etching process for the InAlGaAs material system lattice matched to InP using BCl3/Cl2/CH 4/H2 mixtures is presented. The etching speed is ~700 Å/min which remains approximately the same for all InAlGaAs compositions. The smoothness and the anisotropy of the etched wall appear to be very good. The etching characteristics of InP and mask materials are also reported
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; masks; semiconductor lasers; sputter etching; surface emitting lasers; InAlGaAs-InAlAs; anisotropy; etched wall; etching characteristics; etching speed; lattice matching; long-wavelength VCSELs; mask materials; reactive ion etching; smoothness;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000400
  • Filename
    840155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1329234