Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

Author

Rha, Sang Ho ; Jung, Jisim ; Jung, Yoonsoo ; Chung, Yoon Jang ; Kim, Un Ki ; Hwang, Eun Suk ; Park, Byoung Keon ; Park, Tae Joo ; Choi, Jung-Hae ; Hwang, Cheol Seong

Author_Institution

Dept. of Nano Sci. & Technol., Seoul Nat. Univ., Suwon, South Korea

Volume

59

Issue

12

fYear

2012

Firstpage

3357

Lastpage

3363

Abstract

The transmission-line method (TLM) was adopted to clarify the causes of device performance variation according to the source/drain metal electrode and device structure of a thin-film transistor using an amorphous indium-gallium-zinc-oxide channel. Using the TLM, the channel characteristics independent of contact resistance were extracted for the two different contact metals, i.e., Ti and Mo. Based on these results, the mobility characteristics were compared in terms of device scaling and contact structure in the source/drain overlap region. In addition, the transport characteristics according to the contact structure of the source/drain metal electrode were investigated in detail and reproduced using the simulation model.

Keywords

II-VI semiconductors; electrodes; gallium compounds; indium compounds; thin film transistors; transmission line theory; wide band gap semiconductors; zinc compounds; InGaZnO; TLM; amorphous indium-gallium-zinc-oxide channel; mobility characteristics; source-drain metal electrode TFT; source-drain overlap region; thin-film transistor; transmission-line method; Contact resistance; Electrodes; Logic gates; Metals; Sputtering; Thin film transistors; Amorphous indium–gallium–zinc-oxide (a-IGZO); thin-film transistors (TFTs); transmission-line method (TLM);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2220367

Filename

6341810