Numerical Simulations of Automatic Change of Threshold Voltage Shift in SRAM With Double-Floating-Gate Structures

Author

Tanamoto, Tetsufumi ; Tatsumura, Kosuke ; Sakuma, Kiwamu ; Kinoshita, Atsuhiro ; Fujita, Shinobu ; Muraoka, Kouichi

Author_Institution

Corp. R&D Center, Toshiba Corp., Kawasaki, Japan

Volume

59

Issue

12

fYear

2012

Firstpage

3255

Lastpage

3262

Abstract

We theoretically investigate the self-adjustment mechanism of the threshold voltage shift of the static random access memory (SRAM) based on the double-floating-gate (DFG) structure by considering the capacitive coupling between the neighboring DFGs. We numerically show that the threshold voltage shift is enhanced by the interference between DFGs through the capacitive coupling. The static noise margin of DFG-SRAM is analytically estimated and expected to increase by more than 50% at 0.5-V operation.

Keywords

circuit noise; numerical analysis; random-access storage; DFG-SRAM; automatic change; capacitive coupling; double-floating-gate structures; numerical simulation; self-adjustment mechanism; static noise margin; static random access memory; threshold voltage shift; Logic gates; Random access memory; Standards; Threshold voltage; Transistors; Tunneling; Analytical model; Floating gate (FG); static random access memory (SRAM); threshold shift;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2219312

Filename

6341812