DocumentCode :
1329303
Title :
Improved nonlinear coefficient (0.7 pm/V) in silica thermally poled at high voltage and temperature
Author :
Liu, A.C. ; Digonnet, M.F. ; Kino, G.S. ; Knystautas, E.J.
Author_Institution :
Stanford Univ., CA, USA
Volume :
36
Issue :
6
fYear :
2000
fDate :
3/16/2000 12:00:00 AM
Firstpage :
555
Lastpage :
556
Abstract :
It is shown that in thermally poled silica a substantially increased second-order nonlinearity is induced when both the poling voltage and the temperature are increased under standard poling conditions (~275°C/~5 kV). Increases in the voltage result in a nonlinear region with a greater width and buried depth, while increases in the temperature enhance the peak nonlinear coefficient d33. In a silica sample poled at 400°C and 20 kV, a nonlinear region 10 μm deep was measured with a d33 of 0.7 pm/V which is twice as large as that for a sample poled under standard conditions, and the highest reliable reported value
Keywords :
dielectric polarisation; nonlinear optics; optical harmonic generation; optical waveguides; silicon compounds; buried depth; nonlinear coefficient; poling voltage; second-order nonlinearity; standard poling conditions; thermal poling;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000431
Filename :
840164
Link To Document :
بازگشت