• DocumentCode
    1329338
  • Title

    An Advanced External Compensation System for Active Matrix Organic Light-Emitting Diode Displays With Poly-Si Thin-Film Transistor Backplane

  • Author

    In, Hai-Jung ; Oh, Kyong-Hwan ; Lee, Inhwan ; Ryu, Do-Hyung ; Choi, Sang-Moo ; Kim, Keum-Nam ; Kim, Hye-Dong ; Kwon, Oh-Kyong

  • Author_Institution
    Div. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea
  • Volume
    57
  • Issue
    11
  • fYear
    2010
  • Firstpage
    3012
  • Lastpage
    3019
  • Abstract
    An advanced method for externally compensating the nonuniform electrical characteristics of polycrystalline silicon thin-film transistors (TFTs) and the degradation of organic light-emitting diode (OLED) devices is proposed, and the method is verified using a 14.1-in active matrix OLED (AMOLED) panel. The proposed method provides an effective solution for high-image-quality AMOLED displays by removing IR-drop and temperature effects during the sensing and displaying operations of the external compensation method. Experimental results show that the electrical characteristics of TFTs and OLEDs are successfully sensed, and that the stained image pattern due to the nonuniform luminance error and the differential aging of the OLED is removed. The luminance error range without compensation is from -6.1% to 9.0%, but it is from -1.1% to 1.2% using the external compensation at the luminance level of 120 cd/m2 in a 14.1-inch AMOLED panel.
  • Keywords
    LED displays; elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; AMOLED; Si; active matrix OLED panel; active matrix organic light-emitting diode displays; advanced external compensation system; organic light-emitting diode devices; poly-silicon thin-film transistor backplane; Active matrix organic light emitting diodes; Degradation; Flat panel displays; Light emitting diodes; Sensors; Thin film transistors; Compensation; flat-panel displays; light-emitting diode (LED) displays; thin-film transistors (TFTs);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2010.2067750
  • Filename
    5580066