Title :
Power PHEMT with compact device layout for low voltage CDMA application
Author :
Chang, E.Y. ; Lee, Di-Houng ; Chen, S. II ; Chang, H.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
3/16/2000 12:00:00 AM
Abstract :
A high efficiency low voltage operation dual delta-doped AlGaAs-InGaAs-GaAs pseudomorphic high electron mobility transistor (PHEMT) for low voltage code division multiple access (CDMA) application has been developed. When tested at 2.4 V and 1.9 GHz under IS-95 CDMA modulation, the 20.16 mm PHEMT device was found to have a linear output power of 28 dBm with a power added efficiency of 30.2%. The device also has a saturation power of 20.0 dBm with a power added efficiency of 61.5%. The high efficiency and linearity of the PHEMT at low bias voltage is attributed to the use of the dual delta-doped PHEMT structure and to the reduction of the size of the device layout. The device is suitable for low voltage CDMA applications
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; code division multiple access; digital radio; gallium arsenide; indium compounds; power HEMT; 1.9 GHz; 2.4 V; 30.2 percent; 61.5 percent; AlGaAs-InGaAs-GaAs; IS-95 CDMA modulation; code division multiple access; compact device layout; device linearity; dual delta-doped PHEMT; high efficiency type; high electron mobility transistor; low voltage CDMA application; power PHEMT; pseudomorphic HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000360
