Title :
Reduction of epitaxial alignment in n+-p poly-Si emitter diode due to gettering of P and As by Ar implantation
Author :
Lee, Lurng Shchng ; Lee, Chung Len
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
3/16/2000 12:00:00 AM
Abstract :
It is demonstrated that Ar implantation can retard the epitaxial realignment of poly-Si/Si in an As- or P-doped n+-p poly-emitter diode during BF2 implantation. This is believed to be due to the gettering of As, P, and F by bubble-like defects created by the Ar implantation used to reduce the pile-up of these dopants at the poly-Si-Si interface. Consequently. There is less break-up of the interface oxide, resulting in a reduction in epitaxial realignment
Keywords :
argon; arsenic; bipolar integrated circuits; bipolar transistors; getters; ion implantation; phosphorus; semiconductor diodes; semiconductor doping; silicon; Ar implantation; As gettering; As-doped n+-p poly-emitter; BF2; BF2 implantation; F gettering; P gettering; P-doped n+-p poly-emitter; Si:As,F; Si:P,F; bipolar ICs; bubble-like defects; epitaxial alignment reduction; epitaxial realignment retardation; interface oxide; n+-p poly-Si emitter diode; poly-Si-Si interface; poly-emitter transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000379
