• DocumentCode
    1329419
  • Title

    Reduction of epitaxial alignment in n+-p poly-Si emitter diode due to gettering of P and As by Ar implantation

  • Author

    Lee, Lurng Shchng ; Lee, Chung Len

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    36
  • Issue
    6
  • fYear
    2000
  • fDate
    3/16/2000 12:00:00 AM
  • Firstpage
    579
  • Lastpage
    581
  • Abstract
    It is demonstrated that Ar implantation can retard the epitaxial realignment of poly-Si/Si in an As- or P-doped n+-p poly-emitter diode during BF2 implantation. This is believed to be due to the gettering of As, P, and F by bubble-like defects created by the Ar implantation used to reduce the pile-up of these dopants at the poly-Si-Si interface. Consequently. There is less break-up of the interface oxide, resulting in a reduction in epitaxial realignment
  • Keywords
    argon; arsenic; bipolar integrated circuits; bipolar transistors; getters; ion implantation; phosphorus; semiconductor diodes; semiconductor doping; silicon; Ar implantation; As gettering; As-doped n+-p poly-emitter; BF2; BF2 implantation; F gettering; P gettering; P-doped n+-p poly-emitter; Si:As,F; Si:P,F; bipolar ICs; bubble-like defects; epitaxial alignment reduction; epitaxial realignment retardation; interface oxide; n+-p poly-Si emitter diode; poly-Si-Si interface; poly-emitter transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000379
  • Filename
    840180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1329419