Title :
The Influence of Channel Compositions on the Electrical Properties of Solution-Processed Indium-Zinc Oxide Thin-Film Transistors
Author :
Chen, Chang-Ken ; Hsieh, Hsing-Hung ; Shyue, Jing-Jong ; Wu, Chung-Chih
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Electrical properties of indium-zinc oxide (IZO) thin-film-transistors (TFTs) based on solution processes with various channel compositions are investigated in this paper. Amorphous IZO thin films with high transparency and smooth/uniform surfaces are deposited by spin-coating. The In:Zn ratio is varied by adjusting the precursor compositions, and its influences on the electrical properties, such as resistivity, mobility, and threshold voltage, etc., of IZO films and TFTs are studied. The devices showed field effect mobility ranging from 0.07 to 2.13 cm2/Vmiddots with the In component (In/(In + Zn)) varying from 0.2 to 0.5.
Keywords :
electric properties; spin coating; thin film transistors; amorphous IZO thin films; channel compositions; electrical properties; solution-processed indium-zinc oxide thin-film transistors; spin coating; Amorphous materials; Conductivity; Gold; Pulsed laser deposition; Semiconductor films; Sputtering; Substrates; Thin film transistors; Threshold voltage; Zinc; Channel compositions; indium-zinc oxide (IZO); oxide semiconductors; solution processing; thin-film transistors (TFTs);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2009.2024437
