Title :
Atomic Interfacial Structures in Fe/GaAs Films
Author :
Fleet, L.R. ; Kobayashi, Hideo ; Ohno, Y. ; Hirohata, Atsufumi
Author_Institution :
Dept. of Electron., Univ. of York, York, UK
Abstract :
We discuss the effect of the atomic interfacial structure on the Schottky barrier height in Fe/GaAs films. HRTEM image simulations, produced using the microscopy software JEMS, were used to predict the interfacial structure of Fe/GaAs thin films. Comparisons between experimental images, obtained using a JEOL FS2200 microscope, and the image simulations show the interfaces to contain various structures. This leads to regions with different barrier properties giving a distribution of barrier heights. This would create preferential regions for tunnelling across the film which would dominate device characteristics.
Keywords :
III-V semiconductors; Schottky barriers; atomic structure; gallium arsenide; interface structure; iron; semiconductor epitaxial layers; semiconductor growth; spin polarised transport; transmission electron microscopy; tunnelling; Fe-GaAs; HRTEM image simulations; JEOL FS2200 microscopy; Schottky barrier height; atomic interfacial structure; barrier properties; epitaxial films; high resolution transmission electron microscopy; microscopy software JEMS; spin injection; tunnelling; Epitaxial growth; Gallium arsenide; Iron; Schottky barriers; Surface reconstruction; Temperature measurement; Tunneling; Fe; GaAs and Schottky barrier; spin-polarized injection; spintronics;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2011.2156388
