DocumentCode :
1329558
Title :
Effect of Annealing Process on Residual Strain/Stress Behaviors in FePt Thin Films
Author :
Hsiao, S.N. ; Chen, Steve K. ; Liu, Simon H. ; Liao, C.J. ; Yuan, F.T. ; Lee, H.Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Feng Chia Univ., Taichung, Taiwan
Volume :
47
Issue :
10
fYear :
2011
Firstpage :
3637
Lastpage :
3640
Abstract :
We have characterized the dependence of residual strain/stress on annealing process (post- and in-situ annealing) in single-layer FePt films prepared by sputtering onto amorphous glass substrates. A remarkable difference of evolutions in residual strains between post-andin-situ annealed samples was observed by Sin2 ψ method using synchrotron radiation. The onset of ordering temperature for both series samples is almost identical (~ 350 °C), verified by x-ray diffraction. Crystalline domain size, measured by x-ray peak breadths, of FePt films indicates a difference between these two series samples, which is associated with evolution of residual strain. We believe that the dynamic stress relaxation is the major factor in discrepancy of the residual stress behavior, since the atomic mobility of adatoms during film deposition for in-situ annealing samples are much higher than that for post-annealed films. It is further deduced that residual strain mechanisms may influence the ordering behaviors and related microstructure of FePt films.
Keywords :
X-ray diffraction; annealing; iron alloys; metallic thin films; platinum alloys; sputter deposition; stress-strain relations; synchrotron radiation; FePt; SiO2; X-ray diffraction; adatoms; amorphous glass substrates; annealing process; atomic mobility; crystalline domain size; dynamic stress relaxation; microstructure; residual strain-stress mechanism; single-layer thin films; sputter deposition; synchrotron radiation; Annealing; Internal stresses; Substrates; Synchrotron radiation; Tensile strain; $L1_{0}$; Annealing process; FePt thin films; residual strain/stress;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2011.2147291
Filename :
6027658
Link To Document :
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