A V-Band Divide-by-Three Injection-Locked Frequency Divider in 28 nm CMOS

Author

Hsieh, Hsieh-Hung ; Liu, Yi-Hsuan ; Yeh, Tzu-Jin ; Jou, Chewn-Pu ; Hsueh, Fu-Lung

Author_Institution

Mixed-Signal RF Solution Div. (MRSD), Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan

Volume

22

Issue

11

fYear

2012

Firstpage

592

Lastpage

594

Abstract

In this letter, the 28 nm CMOS divide-by-three injection-locked frequency divider (ILFD) operating at the V band is presented for the first time. Based on a differential direct injection scheme, the proposed circuit can perform a division ratio of three while an enhanced locking range is achieved due to superior injection efficiency. From the measured results, the core circuit consumes a dc power of 8.8 mW from a 1 V supply voltage. At an incident power level of 0 dBm, the divider exhibits a locking range from 52.61 to 55.12 GHz. Within this frequency range, the output power and phase noise are kept around -5 dBm and -125 dBc/Hz at a 1 MHz offset, respectively.

Keywords

CMOS integrated circuits; frequency dividers; nanoelectronics; CMOS; V-band divide-by-three injection-locked frequency divider; core circuit; differential direct injection scheme; frequency 1 MHz; frequency 52.61 GHz to 55.12 GHz; injection efficiency; phase noise; power 8.8 mW; size 28 nm; voltage 1 V; CMOS integrated circuits; Frequency conversion; Logic gates; Phase noise; Radio frequency; Time frequency analysis; 28 nm CMOS; CMOS RF; differential direct injection; divide-by-three; injection-locked frequency divider (ILFD);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2225603

Filename

6342893