Title :
Behavioral Study of Single-Event Burnout in Power Devices for Natural Radiation Environment Applications
Author :
Zerarka, M. ; Austin, P. ; Toulon, G. ; Morancho, F. ; Arbess, H. ; Tasselli, J.
Author_Institution :
LAAS-CNRS, Univ. of Toulouse, Toulouse, France
Abstract :
Two-dimensional numerical simulations have been performed to define the sensitive volume and triggering criteria of single-event burnouts (SEBs) for standard and superjunction MOSFETs and planar and trench IGBTs for different configurations of ionizing tracks and for different conditions of polarization and temperature. The analysis of the results gives a better understanding of the SEB mechanism in each structure and a comparison of behavior and robustness of these technologies under heavy-ion irradiation.
Keywords :
insulated gate bipolar transistors; numerical analysis; polarisation; power MOSFET; SEB mechanism; heavy-ion irradiation; natural radiation environment application; planar IGBT; polarization; power device; sensitive volume; single-event burnout; superjunction MOSFET; trench IGBT; triggering criteria; two-dimensional numerical simulation; Insulated gate bipolar transistors; Junctions; MOSFETs; Semiconductor optical amplifiers; Substrates; MOSFET; TCAD simulations; planar IGBT; safe operating area (SOA); sensitive volume; single-event burnout (SEB); superjunction (SJ) MOSFET (SJ MOSFET); trench IGBT; triggering criteria;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2222889
