DocumentCode :
1329811
Title :
6 μm vertical cavity surface emitting laser based on IV-VI semiconductor compounds
Author :
Schwarzl, T. ; Heiss, W. ; Springholz, G. ; Aigle, M. ; Pascher, H.
Author_Institution :
Inst. fur Halbleiter- und Festkorperphys., Johannes Kepler Univ., Linz, Austria
Volume :
36
Issue :
4
fYear :
2000
fDate :
2/17/2000 12:00:00 AM
Firstpage :
322
Lastpage :
324
Abstract :
An optically-pumped lead salt-based vertical cavity surface emitting laser is presented. The laser structure grown by molecular-beam epitaxy consists of a Pb0.99Eu0.01Te/PbTe λ/2 microcavity with Pb0.99Eu0.01Te/Pb0.94Eu0.06 Te Bragg mirrors. Stimulated emission was observed at 6073 nm below 25 K
Keywords :
IV-VI semiconductors; europium compounds; laser beams; laser mirrors; lead compounds; microcavity lasers; molecular beam epitaxial growth; optical fabrication; optical pumping; semiconductor lasers; stimulated emission; surface emitting lasers; 25 K; 6 mum; 6073 nm; IV-VI semiconductor compounds; Pb0.99Eu0.01Te-Pb0.94Eu0.06 Te; Pb0.99Eu0.01Te-PbTe; Pb0.99Eu0.01Te/Pb0.94Eu0.06 Te Bragg mirrors; Pb0.99Eu0.01Te/PbTe microcavity; laser structure; lead salt-based vertical cavity surface emitting laser; molecular-beam epitaxy; optically-pumped laser; stimulated emission; vertical cavity surface emitting laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000260
Filename :
840235
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1329811
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