Study on case temperature distribution for condition monitoring of multidie IGBT modules

Author

Bo Tian ; Ze Wang ; Wei Qiao

Author_Institution

Dept. of Electr. Eng., Univ. of Nebraska-Lincoln, Lincoln, NE, USA

fYear

2014

fDate

16-20 March 2014

Firstpage

2564

Lastpage

2568

Abstract

The parasitic and proximity effects in multidie insulated-gate bipolar transistor (IGBT) modules lead to nonuniform distributions of junction temperature (T_J) and case temperature (T_C) among different dies. This feature can be used to monitor the operating and health condition of multidie IGBT modules. This paper reports a comprehensive study on the distribution of T_C and its influence on T_J estimation using a thermal network model for a multidie IGBT module before and after aging. Specifically, experimental studies using accelerated aging tests are conducted for a 9-die IGBT module. Results demonstrate that the T_C at the position close to the package side and terminal lead should be used to estimate T_J for condition monitoring of the multidie IGBT module. Moreover, the variation of T_C and nonuniformity of the T_C distribution can be used as indicators for health condition monitoring of the multidie IGBT module.

Keywords

condition monitoring; insulated gate bipolar transistors; temperature distribution; case temperature distribution; health condition monitoring; junction temperature nonuniform distributions; multidie IGBT modules; multidie insulated-gate bipolar transistor modules; package side; parasitic effects; proximity effects; terminal lead; thermal network model; Accelerated aging; Condition monitoring; Insulated gate bipolar transistors; Junctions; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE

Conference_Location

Fort Worth, TX

Type

conf

DOI

10.1109/APEC.2014.6803664

Filename

6803664