DocumentCode
1329956
Title
Improved performances of AlGaAs-GaAs NpnP optical thyristor using bottom mirror layers
Author
Kim, D.G. ; Lee, J.J. ; Choi, Y.W. ; Lee, S. ; Woo, D.H. ; Kang, B.K. ; Kim, S.H.
Author_Institution
Lab. of Opt. Interconnection, Chungang Univ., Seoul, South Korea
Volume
36
Issue
4
fYear
2000
fDate
2/17/2000 12:00:00 AM
Firstpage
348
Lastpage
350
Abstract
Significantly improved performances are reported for a fully depleted NpnP optical thyristor with bottom mirror layers. This device shows 20 and 45% enhancement in terms of switching voltage and spontaneous emission efficiency, respectively
Keywords
photothyristors; AlGaAs-GaAs; III-V semiconductors; NpnP optical thyristor; bottom mirror layers; spontaneous emission efficiency; switching voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000274
Filename
840253
Link To Document