Title :
Electrical characterisation of short gate In0.60Ga0.40As-In0.36Al0.64 As0.84Sb0.16 high electron mobility transistors on InP substrate
Author :
Micovic, M. ; Matloubian, M. ; Hu, M. ; Harvey, D.S. ; Nguyen, C. ; Janke, P.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
fDate :
2/17/2000 12:00:00 AM
Abstract :
An investigation into the DC and RF performance of MBE-grown In 0.36Al0.64As0.84Sb0.16/In 0.52Al0.48As/In0.60Ga0.40As HEMTS on InP substrate is presented. A composite InAlAsSb Schottky barrier is used to enhance the carrier confinement in the channel. Devices exhibit a drain current of 850 mA/mm, an extrinsic gm of 1.22 S/mm and an fτ of 240 GHz. This is the highest f τ to date for an InAlAsSb barrier HEMT
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 240 GHz; DC performance; III-V semiconductors; In0.60Ga0.40As-In0.36Al0.64 As0.84Sb0.16; InP; MBE; RF performance; channel carrier confinement; drain current; electrical characterisation; extrinsic gm; high electron mobility transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000270
