Title :
Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator
Author :
Yu, E.F. ; Shen, J. ; Walther, M. ; Lee, T.-C. ; Zhang, R.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fDate :
2/17/2000 12:00:00 AM
Abstract :
A planar GaAs MOSFET has been realised in which ion implantation is used for device isolation and wet thermal oxidation of Al0.98 Ga0.02As for both the gate insulation and channel encapsulation. Selective etches of AlGaAs/GaAs and Al2O3 /GaAs were incorporated in the device fabrication. The depletion-mode device has a threshold voltage of about -4V, a transconductance of 23.9 mS/mm and a low gate leakage current
Keywords :
MOSFET; encapsulation; etching; insulating thin films; ion implantation; isolation technology; leakage currents; -4 V; Al2O3-GaAs; AlGaAs-GaAs; channel encapsulation; depletion-mode device; device fabrication; device isolation; gate leakage current; ion implantation; planar MOSFET; selective etches; threshold voltage; transconductance; wet thermally oxidised gate insulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000281
