DocumentCode :
1330014
Title :
Planar GaAs MOSFET using wet thermally oxidised AlGaAs as gate insulator
Author :
Yu, E.F. ; Shen, J. ; Walther, M. ; Lee, T.-C. ; Zhang, R.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Volume :
36
Issue :
4
fYear :
2000
fDate :
2/17/2000 12:00:00 AM
Firstpage :
359
Lastpage :
361
Abstract :
A planar GaAs MOSFET has been realised in which ion implantation is used for device isolation and wet thermal oxidation of Al0.98 Ga0.02As for both the gate insulation and channel encapsulation. Selective etches of AlGaAs/GaAs and Al2O3 /GaAs were incorporated in the device fabrication. The depletion-mode device has a threshold voltage of about -4V, a transconductance of 23.9 mS/mm and a low gate leakage current
Keywords :
MOSFET; encapsulation; etching; insulating thin films; ion implantation; isolation technology; leakage currents; -4 V; Al2O3-GaAs; AlGaAs-GaAs; channel encapsulation; depletion-mode device; device fabrication; device isolation; gate leakage current; ion implantation; planar MOSFET; selective etches; threshold voltage; transconductance; wet thermally oxidised gate insulator;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000281
Filename :
840261
Link To Document :
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