Data driven modeling and verification for silicon carbide JFET with thermal effects

Author

Ruan Li-gang ; Zhu Ping ; Wang Li

Author_Institution

Electr. Eng. Dept., Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China

fYear

2014

fDate

16-20 March 2014

Firstpage

2649

Lastpage

2653

Abstract

A data driven model with thermal effects is proposed for normally-off SiC JFET in this paper. The novel feature of the model is that it saves the trouble of obtaining the physical parameters. Besides, the effect of temperature on SiC JFET performance is taken into account. It is important because the physical parameters on materials and dimensions of a particular SiC JFET device are difficult to be obtained for device users. The model is implemented based directly upon the characteristics of device datasheet and data from experimental tests. Simulation and experiments are carried out for the research of steady state characteristics, switching characteristics and short-circuit characteristics, which verify the accuracy of the model. Method of data driven modeling can be applied to the other power semiconductor switches.

Keywords

junction gate field effect transistors; power field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; data driven modeling; data driven verification; physical parameters; power semiconductor switches; short-circuit characteristics; silicon carbide JFET; steady state characteristics; switching characteristics; thermal effects; Data models; Integrated circuit modeling; JFETs; Junctions; Silicon carbide; Switches; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE

Conference_Location

Fort Worth, TX

Type

conf

DOI

10.1109/APEC.2014.6803678

Filename

6803678