Title :
GaAs/AlGaAs multiple quantum well PIN diodes grown by selective area epitaxy
Author :
Roberts, David A. ; David, J.P.R. ; Hill, Graeme ; Houston, P.A. ; Pate, M.A. ; Roberts, Jeffrey S. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ.
fDate :
7/7/1988 12:00:00 AM
Abstract :
The authors have investigated the selective growth of GaAs/AlGaAs MQW PIN diodes by atmospheric pressure MOCVD. A patterned spin-on silica film was used to restrict single-crystal growth to the exposed areas of the substrate. It was found that high-quality material can be grown by selective area epitaxy although edge effects currently limit the device performance
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaAs-AlGaAs; III-V semiconductors; MQW; PIN diodes; VPE; atmospheric pressure MOCVD; edge effects; multiple quantum well; optoelectronics; p-i-n devices; patterned spin-on silica film; selective area epitaxy; single-crystal growth;
Journal_Title :
Electronics Letters
