• DocumentCode
    13303
  • Title

    Enhancement of Open-circuit Voltage Using CF4 Plasma Treatment on Nitric Acid Oxides

  • Author

    Je-Wei Lin ; Chien-Hung Wu ; Sheng-Wei Wu ; Wei-Ping Hseih ; Chen-Hsu Du ; Tien-Sheng Chao

  • Author_Institution
    Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    34
  • Issue
    5
  • fYear
    2013
  • fDate
    May-13
  • Firstpage
    665
  • Lastpage
    667
  • Abstract
    Surface passivation of solar cells is investigated using CF4 plasma treatment on low-temperature oxides to enhance the open-circuit voltage of the solar cells. Low-temperature oxides grown by a nitric acid solution are treated with the CF4 plasma. Solar cells undergoing this scheme show an improved performance, including low-saturation current density and good quantum efficiency at short wavelengths. Experimental results demonstrate that the CF4 plasma pretreatment on low-temperature oxides can significantly improve the open-circuit voltage, short-circuit current, and fill factor for silicon wafer-based solar cells. This technique is very promising for in-line solar cell manufacturing.
  • Keywords
    carbon compounds; current density; elemental semiconductors; low-temperature techniques; passivation; plasma materials processing; silicon; solar cells; CF4; CF4 plasma treatment; Si; fill factor; in-line solar cell manufacturing; low-saturation current density; low-temperature oxides; nitric acid oxides; open-circuit voltage; open-circuit voltage enhancement; quantum efficiency; short-circuit current; silicon wafer-based solar cells; surface passivation; ${rm CF}_{4}$ plasma; low-temperature oxides; open-circuit voltage; surface passivation;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2013.2253757
  • Filename
    6495702