DocumentCode :
13303
Title :
Enhancement of Open-circuit Voltage Using CF4 Plasma Treatment on Nitric Acid Oxides
Author :
Je-Wei Lin ; Chien-Hung Wu ; Sheng-Wei Wu ; Wei-Ping Hseih ; Chen-Hsu Du ; Tien-Sheng Chao
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
34
Issue :
5
fYear :
2013
fDate :
May-13
Firstpage :
665
Lastpage :
667
Abstract :
Surface passivation of solar cells is investigated using CF4 plasma treatment on low-temperature oxides to enhance the open-circuit voltage of the solar cells. Low-temperature oxides grown by a nitric acid solution are treated with the CF4 plasma. Solar cells undergoing this scheme show an improved performance, including low-saturation current density and good quantum efficiency at short wavelengths. Experimental results demonstrate that the CF4 plasma pretreatment on low-temperature oxides can significantly improve the open-circuit voltage, short-circuit current, and fill factor for silicon wafer-based solar cells. This technique is very promising for in-line solar cell manufacturing.
Keywords :
carbon compounds; current density; elemental semiconductors; low-temperature techniques; passivation; plasma materials processing; silicon; solar cells; CF4; CF4 plasma treatment; Si; fill factor; in-line solar cell manufacturing; low-saturation current density; low-temperature oxides; nitric acid oxides; open-circuit voltage; open-circuit voltage enhancement; quantum efficiency; short-circuit current; silicon wafer-based solar cells; surface passivation; ${rm CF}_{4}$ plasma; low-temperature oxides; open-circuit voltage; surface passivation;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2253757
Filename :
6495702
Link To Document :
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