Title :
Interband cascade laser emitting >1 photon per injected electron
Author :
Felix, C.L. ; Bewley, W.W. ; Vurgaftman, I. ; Meyer, J.R. ; Zhang, D. ; Lin, C.-H. ; Yang, R.Q. ; Pei, S.S.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
A 22-stage interband cascade laser with a "W" active region for enhanced gain has exhibited lasing at /spl lambda/=3.0 μm. Threshold current densities are lower than the best reported intersubband quantum cascade laser results at all T up to the maximum lasing temperature of 225 K. At 100 K, output powers up to 430 mW are observed, and the slope of 274 mW/A per facet for high injection levels corresponds to a quantum efficiency of 1.3 photons emitted for every injected electron.
Keywords :
III-V semiconductors; current density; indium compounds; laser transitions; quantum well lasers; 100 K; 22-stage interband cascade laser; 225 K; 3 mum; 430 mW; InAs; InAs quantum well laser; active region; enhanced gain; high injection levels; injected electron; interband cascade laser; intersubband quantum cascade laser; maximum lasing temperature; output powers; quantum efficiency; threshold current densities; Electron emission; Laser modes; Lead; Power generation; Predictive models; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
