A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

Author

Miyamoto, T. ; Takeuchi, K. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

9

Issue

11

fYear

1997

Firstpage

1448

Lastpage

1450

Abstract

We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3 μm or longer wavelength light. The idea is insertion of lattice-matched GaInNAs intermediate layers between well and barrier, which is effective for elongating the emission wavelength and reducing well thickness. It is shown that 1.3-μm emission is achievable by using the proposed GaInNAs-GaAs QW with a well thickness thinner than that of conventional rectangular GaInNAs QWs. This structure will relax the design limitation of strained GaInNAs layers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; 1.3 mum; GaInNAs-GaAs; GaInNAs-GaAs QW; GaInNAs-GaAs lasers; GaInNAs-GaAs quantum-well structure; emission wavelength; lattice-matched GaInNAs intermediate layers; long-wavelength semiconductor lasers; rectangular GaInNAs QWs; reducing well thickness; strained GaInNAs layers; well thickness; Conducting materials; Gallium arsenide; Gas lasers; Optical materials; Photonic band gap; Pump lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.634704

Filename

634704