DocumentCode
1330811
Title
Electrical Transport Properties and Spin Injection in 
Junctions
Author
Saito, Takashi ; Tezuka, Nobuki ; Sugimoto, Satoshi
Author_Institution
Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan
Volume
47
Issue
10
fYear
2011
Firstpage
2447
Lastpage
2450
Abstract
We investigated the electrical transport properties in Co2FeAl0.5Si0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a Schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2×10-9 Ω·m2 which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L21 ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.
Keywords
Hanle effect; III-V semiconductors; Schottky barriers; aluminium alloys; cobalt alloys; current density; electrical conductivity; ferromagnetic materials; gallium arsenide; iron alloys; magnetic epitaxial layers; magnetic relaxation; magnetoresistance; semiconductor epitaxial layers; semiconductor-metal boundaries; silicon alloys; spin polarised transport; Co2FeAl0.5Si0.5-GaAs; Hanle measurement; Schottky tunnel barrier; bias dependent conductance; current density-voltage characteristics; electrical transport properties; junction resistance; spin injection efficiency; spin relaxation time; temperature 5 K; Electrodes; Gallium arsenide; Junctions; Magnetic tunneling; Schottky barriers; Spin polarized transport; Temperature measurement; ${rm Co}_{2}{rm FeAl}_{0.5}{rm Si}_{0.5}$ ; full-Heusler alloy; spin injection; spintronics;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2011.2153189
Filename
6027836
Link To Document