Improvement of Resistive Switching Properties in $\\hbox {ZrO}_{2}$ -Based ReRAM With Implanted Ti Ions

Author

Liu, Qi ; Long, Shibing ; Wang, Wei ; Zuo, Qingyun ; Zhang, Sen ; Chen, Junning ; Liu, Ming

Author_Institution

Key Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China

Volume

30

Issue

12

fYear

2009

Firstpage

1335

Lastpage

1337

Abstract

In this letter, the resistive switching properties of a ZrO₂-based memory film with implanted Ti ions are investigated. The testing results demonstrate that doping Ti in ZrO₂ can remove the electroforming process and reduce the variations of switching parameters such as set voltage and resistance in off state. Furthermore, the Ti-doped ZrO₂ resistive switching memory also exhibits high device yield (nearly 100%), low operating voltage, fast speed, large on/off ratio (>10⁴), and long retention time (>10⁷ s). The formation and rupture of conducting filaments are suggested to be responsible for the resistive switching phenomenon. The doped Ti impurities can improve the formation of conducting filaments and switching behaviors.

Keywords

doping; random-access storage; ReRAM; Ti; ZrO₂; conducting filaments; doped impurities; implanted ions; memory film; resistive switching properties; switching behaviors; CMOS technology; Doping; Impurities; Laboratories; Microelectronics; Nanoscale devices; Random access memory; Switches; Testing; Voltage; $ hbox{ZrO}_{2}$; Conductive filament; Ti doping impurities; oxygen vacancy; resistive random access memory (ReRAM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2032566

Filename

5332367

Improvement of Resistive Switching Properties in -Based ReRAM With Implanted Ti Ions

Liu, Qi ; Long, Shibing ; Wang, Wei ; Zuo, Qingyun ; Zhang, Sen ; Chen, Junning ; Liu, Ming

jour

Improvement of Resistive Switching Properties in $\\hbox {ZrO}_{2}$ -Based ReRAM With Implanted Ti Ions