Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

Author

Lee, H.Y. ; Chen, Y.S. ; Chen, P.S. ; Wu, T.Y. ; Chen, F. ; Wang, C.C. ; Tzeng, P.J. ; Tsai, M.-J. ; Lien, C.

Author_Institution

Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

31

Issue

1

fYear

2010

Firstpage

44

Lastpage

46

Abstract

The memory performance of hafnium oxide (HfO_x)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved. Due to the excellent ability of Ti to absorb oxygen atoms from the HfO_x film after post-metal annealing, a large amount of oxygen vacancies are left in the HfO_x layer of the TiN/Ti/HfO_x/TiN stacked layer. These oxygen vacancies are crucial to make a memory device with a stable bipolar resistive switching behavior. Aside from the benefits of low operation power and large on/off ratio (>100), this memory also exhibits reliable switching endurance (>10⁶ cycles), robust resistance states (200??C), high device yield (~100%), and fast switching speed (<10 ns).

Keywords

annealing; buffer layers; electrical resistivity; hafnium compounds; low-power electronics; magnetic switching; titanium; HfO; Ti; bipolar resistive switching behavior; low-power switching; memory device; memory performance; nanosecond switching; oxygen vacancy; postmetal annealing; reliable switching endurance; resistive memory; thin cap; thin reactive buffer layer; $hbox{HfO}_{x}$; Ti reactive buffer layer; resistive memory;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2034670

Filename

5332368