Long-wavelength triangular ring laser

Author

Ji, C. ; Leary, M.H. ; Ballantyne, J.M.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

9

Issue

11

fYear

1997

Firstpage

1469

Lastpage

1471

Abstract

Single-lateral mode, long-wavelength, waveguide diode-ring lasers have been fabricated in InP-InGaAsP with facets etched using CAIBE. The devices lase at around 1.26 μm under pulsed testing. The lowest threshold current is around 64 mA, The best side-mode-suppression ratio (SMSR) is found to be 25.4 dB. Triangular ring lasers demonstrated significantly higher SMSR than Fabry-Perots fabricated on the same chip. Ring laser far-field and output power dependence on structural angle are also reported.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; ring lasers; sputter etching; waveguide lasers; 1.26 mum; 64 mA; CAIBE; InP-InGaAsP; etched facets; long-wavelength triangular ring laser; output power dependence; pulsed testing; ring laser far-field; side-mode-suppression ratio; single-lateral mode; structural angle; threshold current; waveguide diode-ring lasers; Diodes; Etching; Fabry-Perot; Laser modes; Power generation; Power lasers; Ring lasers; Testing; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.634711

Filename

634711