A physical model for the kink effect in InAlAs/InGaAs HEMTs

Author

Somerville, Mark H. ; Ernst, Alexander ; Del Alamo, JesÙs A.

Author_Institution

Dept. of Phys. & Astron., Vassar Coll., Poughkeepsie, NY, USA

Volume

47

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

922

Lastpage

930

Abstract

We present a new model for the the kink effect in InAlAs/InGaAs HEMTs. The model suggests that the kink is due to a threshold voltage shift which arises from a hole pile-up in the extrinsic source and an ensuing charging of the surface and/or the buffer-substrate interface. The model captures many of the observed behaviors of the kink, including the kink´s dependence on bias, time, temperature, illumination, and device structure. Using the model, we have developed a simple equivalent circuit, which reproduced well the kink´s dc characteristics, its time evolution in the nanosecond range, and its dependence on illumination

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; hole density; indium compounds; semiconductor device models; HEMTs; III-V semiconductors; InAlAs-InGaAs; buffer-substrate interface; dc characteristics; equivalent circuit; extrinsic source; hole pile-up; illumination; kink effect; physical model; threshold voltage shift; time evolution; Computational modeling; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Insulation; Lighting; MODFETs; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.841222

Filename

841222