Title :
Electrical Stability of Hexagonal a-Si:H TFTs
Author :
Yoo, Geonwook ; Lee, Hojin ; Kanicki, Jerzy
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
In this letter, we study the current-temperature-stress-induced electrical instability of single and multiple hexagonal (HEX) hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) connected in parallel. The influence of the threshold voltage shift of a single HEX TFT on the overall electrical performance of multiple HEX TFTs is discussed. The results indicate that a-Si:H HEX TFTs have an improved electrical stability and a threshold voltage shift linear dependence on a number of connected HEX-TFT units.
Keywords :
amorphous semiconductors; thin film transistors; HEX TFT; current-temperature-stress-induced electrical instability; hexagonal a-Si:H TFT; hydrogenated amorphous silicon thin-film transistors; Amorphous silicon; current–temperature stress (CTS); hexagonal thin-film transistor (HEX TFT); parallel-connected transistors; threshold voltage $(V_{rm th})$;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2034760
