Title :
An a-SiGe:H phototransistor integrated with a Pd film on glass substrate for hydrogen monitoring
Author :
Hsieh, Wen Tse ; Fang, Yean Kuen ; Lee, W.J. ; Wu, Kun-Hsien ; Ho, Jyh-Jier ; Chen, Kui-Huin ; Huang, S.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/2000 12:00:00 AM
Abstract :
A novel a-SiGe:H optoelectronic hydrogen gas sensing device has been developed. The optoelectronic gas sensing device integrated a high optical gain a-SiGe:H optical sensor with a sputtered palladium (Pd) film on a glass substrate. Through the mechanism of the Pd film´s transmitted optical power modulated with the H2 concentration in atmosphere, the device can be operated at room temperature with a wider range (50 ppm to 133000 ppm) and faster response, in comparison to a conventional Pd catalytic type H2 sensors, thus providing a good candidate for hydrogen monitoring
Keywords :
Ge-Si alloys; amorphous semiconductors; gas sensors; hydrogen; integrated optoelectronics; monitoring; optical sensors; palladium; phototransistors; H monitoring; H2; H2 concentration; Pd; Pd film; SiGe:H; a-SiGe:H phototransistor; glass substrate; optoelectronic gas sensing device; sputtered Pd film; Glass; Hydrogen; Integrated optics; Optical devices; Optical films; Optical modulation; Optical sensors; Palladium; Phototransistors; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
