A new quantum effect model for practical device simulation

Author

Shigyo, Naoyuki ; Tanimoto, Hiroyoshi

Author_Institution

Syst. LSI Design Div., Toshiba Corp., Yokohama, Japan

Volume

47

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

1010

Lastpage

1012

Abstract

An increase in the complexity of VLSI design, especially in process integration, is leading to increased demands for technology CAD (TCAD). The quantum mechanical (QM) effect becomes very important with an increase in the channel impurity concentration. Several models for the QM effect have been proposed. However, it has been reported that these models had some problems. In this paper, a new QM model for a conventional device simulator is proposed. Applications of this model to NMOS and PMOS including the buried-channel are examined

Keywords

MOSFET; VLSI; digital simulation; electronic engineering computing; integrated circuit modelling; semiconductor device models; technology CAD (electronics); NMOS devices; PMOS devices; QM effect; TCAD; buried-channel; channel impurity concentration; device simulation; quantum effect model; quantum mechanical effect; technology CAD; Costs; Design automation; Fabrication; Impurities; Interface phenomena; MOS devices; Process design; Quantum mechanics; Semiconductor device modeling; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.841234

Filename

841234