Title :
A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
Author :
Cristoloveanu, Sorin ; Munteanu, Daniela ; Liu, Michael S T
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
5/1/2000 12:00:00 AM
Abstract :
The pseudo-MOS transistor (Ψ-MOSFET) is a surprising and useful technique for the rapid evaluation of SOI wafers, prior to any CMOS processing. We review the static and dynamic modes of operation as well as the main models and methods for electrical parameter extraction. Selected numerical simulations are presented in order to clarify the optimal conditions of operation. Finally, practical applications are exemplified which illustrate the efficiency of the Ψ-MOSFET technique for in situ characterization of SOI technologies and processes
Keywords :
MOSFET; parameter estimation; semiconductor device models; silicon-on-insulator; SOI technologies; SOI wafers; dynamic modes; efficiency; electrical parameter extraction; in situ characterization; pseudo-MOS transistor; static modes; Conductivity; Insulation; MOSFET circuits; Numerical simulation; Parameter extraction; Probes; Semiconductor films; Silicon on insulator technology; Slabs; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
