Title :
A better insight into the performance of silicon BJTs featuring highly nonuniform collector doping profiles
Author :
Palestri, Pierpaolo ; Fiegna, Claudio ; Selmi, Luca ; Peter, Michael S. ; Hurkx, G.A.M. ; Slotboom, Jan W. ; Sangiorgi, Enrico
Author_Institution :
DIEGM, Udine, Italy
fDate :
5/1/2000 12:00:00 AM
Abstract :
This paper investigates the effects of highly nonuniform collector doping profiles on the speed and breakdown performance of silicon bipolar transistors. Monte Carlo and drift diffusion simulation results point out that a thin highly doped layer adjacent to the base collector junction can improve the device cut off frequency without deteriorating significantly the maximum oscillation frequency and the breakdown voltage, provided the voltage drop across this layer is lower than an effective threshold of approximately 1.2 V. Guidelines are given for choosing the doping, position, and thickness of this layer
Keywords :
Monte Carlo methods; bipolar transistors; diffusion; doping profiles; elemental semiconductors; impact ionisation; semiconductor device breakdown; semiconductor device models; silicon; BJTs; Monte Carlo simulation; Si; base collector junction; breakdown performance; breakdown voltage; device cut off frequency; drift diffusion simulation; effective threshold; highly doped layer; highly nonuniform collector doping profiles; layer doping; layer thickness; maximum oscillation frequency; speed performance; Bipolar transistors; Breakdown voltage; Cutoff frequency; Doping profiles; Electric breakdown; Impact ionization; Laboratories; Monte Carlo methods; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
