Title :
1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter
Author :
Takemasa, K. ; Kubota, M. ; Wada, H.
Author_Institution :
Opto-Electron. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
5/1/2000 12:00:00 AM
Abstract :
AlGaInAs buried-heterostructure (BH) lasers with a mode profile converter (MPC) have been successfully fabricated for the first time. The thickness of the multiple-quantum-well (MQW) waveguide was vertically tapered by selective area growth (SAG). The threshold current I/sub th/ was 14.6 mA with a 600-μm-long cavity and a high-reflective-coated rear facet. The full-width at half-maximum of the far-field pattern in the perpendicular and horizontal directions were 9.2/spl deg/ and 12.6/spl deg/, respectively. The optical coupling loss between lasers with MPC and a single-mode fiber was 3.0 dB when the distance between the laser and fiber was 20 μm.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; integrated optics; laser modes; optical fibre couplers; optical losses; quantum well lasers; vapour phase epitaxial growth; waveguide lasers; 1.3 mum; 14.6 mA; 600 mum; AlGaInAs-InP; AlGaInAs-InP buried-heterostructure lasers; far-field pattern; high-reflective-coated rear facet; horizontal direction; mode profile converter; multiple-quantum-well waveguide thickness; optical coupling loss; perpendicular direction; selective area growth; single-mode fiber; threshold current; vertical tapering; Fiber lasers; Laser modes; Optical materials; Optical waveguides; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
