Title :
1.3 μm InGaP/InAsP MQW lasers with large spot-size and low loss fibre chip coupling fabricated by a standard buried heterostructure process
Author :
Bouadma, N. ; Ougazzaden, A. ; Kamoun, Mohamed ; Kazmierski, C. ; Silvestre, L.
Author_Institution :
CNET, Bagneux
fDate :
8/15/1996 12:00:00 AM
Abstract :
1.3 μm large spot-size laser diodes without a mode converter fabricated by conventional buried heterostructure laser process, and using MQW core structure with low effective refractive index are demonstrated. The devices show low coupling losses to cleaved fibre, good alignment tolerances, and high temperature characteristics
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser modes; laser transitions; optical couplers; optical fabrication; optical fibre couplers; optical losses; quantum well lasers; refractive index; μm InGaP/InAsP MQW lasers; 1.3 mum; InGaP-InAsP; MQW core structure; buried heterostructure laser process; cleaved fibre coupling; good alignment tolerances; high temperature characteristics; large spot-size; laser diode fabrication; low coupling losses; low effective refractive index; low loss fibre chip coupling; standard buried heterostructure process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961086
