Title : 
Picotesla Magnetic Sensors for Low-Frequency Applications
         
        
            Author : 
Liou, S.H. ; Xiaolu Yin ; Russek, S.E. ; Heindl, R. ; da Silva, F.C.S. ; Moreland, James ; Pappas, D.P. ; Yuan, Lei ; Shen, Jianbing
         
        
            Author_Institution : 
Dept. of Phys. & Astron., Univ. of Nebraska, Lincoln, NE, USA
         
        
        
        
        
        
        
            Abstract : 
We demonstrate a simple low-power, magnetic sensor system suitable for high-sensitivity magnetic-field mapping, based on solid-state magnetic tunnel junction devices with minimum detectable fields in a 100 pT range at room temperature. In this paper, we discuss a method that uses multilayer thin films to improve the performance of the soft ferromagnetic layer in magnetoresistive sensor applications, by reducing the coercivity and/or improving the reversibility. We have used it in the design of our new magnetic sensor. This sensor has a sensitivity as high as 750%/mT. The magnetic sensor only dissipates 1 mW of power while operating under an applied voltage of 1 V.
         
        
            Keywords : 
boron alloys; cobalt alloys; coercive force; ferromagnetic materials; iron alloys; magnetic hysteresis; magnetic multilayers; magnetic sensors; magnetic thin films; magnetic tunnelling; magnetisation reversal; magnetoresistive devices; nickel alloys; soft magnetic materials; Fe20Ni80Co20B20; coercivity; dissipation; high-sensitivity magnetic-field mapping; magnetic flux density 100 pT; magnetic hysteresis; magnetoresistive sensor applications; multilayer thin films; picotesla magnetic sensors; power 1 mW; reversibility; soft ferromagnetic layer; solid-state magnetic tunnel junction device; temperature 293 K to 298 K; voltage 1 V; Annealing; Iron; Junctions; Magnetic hysteresis; Magnetic sensors; Magnetic tunneling; Noise; Magnetic concentrators; magnetic noise; magnetic sensor; magnetic tunnel junction (MTJ);
         
        
        
            Journal_Title : 
Magnetics, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/TMAG.2011.2157997