DocumentCode :
1331351
Title :
Ultracompact multimode interference 3-dB coupler with strong lateral confinement by deep dry etching
Author :
Yong Ma ; Seoijin Park ; Liwei Wang ; Seng Tiong Ho
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Volume :
12
Issue :
5
fYear :
2000
fDate :
5/1/2000 12:00:00 AM
Firstpage :
492
Lastpage :
494
Abstract :
Extremely short InP-InGaAsP MMI 3-dB couplers (L/spl sim/15-50 μm) with conventional structure have been successfully fabricated. The significant size reduction was achieved by deep dry etching and tapered access waveguide with large S-bend design. Optical transmission measurements on these devices have been performed. An optical bandwidth about 80 nm with a limit of 2-dB excess loss was obtained for most of the couplers. During the whole tunable wavelength range (/spl lambda//spl sim/1485-1580 nm), the imbalance is within /spl plusmn/0.5 dB. Fabrication tolerance and polarization independence are also investigated and the results demonstrated the applicability of these ultracompact devices in high-density photonic integrated circuit.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light interference; optical couplers; optical fabrication; sputter etching; 1485 to 1580 nm; InP-InGaAsP; S-bend design; deep dry etching; excess loss; fabrication; lateral confinement; optical bandwidth; optical transmission; photonic integrated circuit; polarization independence; tapered access waveguide; ultracompact multimode interference coupler; wavelength tuning; Bandwidth; Couplings; Dry etching; Interference; Optical devices; Optical losses; Optical waveguides; Performance evaluation; Ultraviolet sources; Wavelength measurement;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.841263
Filename :
841263
Link To Document :
بازگشت